TIC116A, tic116b, tic116c, tic116d, tic116e, tic116m, tic116n, tic116s 29/10/2012 comset semiconductors 1 | 4 semiconductors p-n-p-n silicon reverse-blocking triode thyristors ? 8 a continuous on-state current ? 80 a surge-current ? glass passivated wafer ? 100 v to 800 v off-state voltage ? max i gt of 20 ma ? compliance to rohs absolute maximum ratings symbol ratings value unit a b c d e m s n v drm repetitive peak off-state voltage (see note1) 100 200 300 400 500 600 700 800 v v rrm repetitive peak reverse voltage 100 200 300 400 500 600 700 800 v i t(rms) continuous on-state current at (or below) 70c case temperature (see note2) 8 a i t(av) average on-state current (180 conduction angle) at(or below) 70c case temperature (see note3) 5 a i tm surge on-state current (see note4) 80 a i gm peak positive gate current (pulse width 300 s) 3 a p gm peak power dissipation (pulse width 300 s) 5 w p g(av) average gate power dissipation (see note5) 1 w t c operating case temperature range -40 to +110 c t st g storage temperature range -40 to +125 c t l lead temperature 1.6 mm from case for 10 seconds 230 c http://www..net/ datasheet pdf - http://www..net/
TIC116A, tic116b, tic116c, tic116d, tic116e, tic116m, tic116n, tic116s 29/10/2012 comset semiconductors 2 | 4 semiconductors thermal characteristics symbol ratings value unit t gt gate-controlled turn-on time v aa = 30 v, r l = 6 , r gk ( eff ) = 100 , v in = 20 v 0.8 s t q circuit-communicated turn-off time v aa = 30 v, r l = 6 , i rm 10 a 11 r ? jc junction to case thermal resistance 3 c/w r ? j a junction to free air thermal resistance 62.5 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i drm repetitive peak off-state current v d = rated v drm , r gk = 1 k ? t c = 110c - - 2 ma i rrm repetitive peak reverse current v r = rated v rrm , i g = 0 t c = 110c - - 2 ma i gt gate trigger current v aa = 6 v, r l = 100 ? t p (g) 20s - 5 20 ma v gt gate trigger voltage v aa = 6 v, r l = 100 ? r gk = 1 k ? , t p(g) 20s t c = -40c - - 2.5 v v aa = 6 v, r l = 100 ? r gk = 1 k ? , t p (g) 20s - 0.8 1.5 v aa = 6 v, r l = 100 ? r gk = 1 k ? , t p(g) 20s t c = 110c 0.2 - - i h holding current v aa = 6 v, r gk = 1 k ? initiating i t = 100 ma - - 40 ma v aa = 6 v, r gk = 1 k ? initiating i t = 100 ma t c = -40c - - 70 v tm peak on-state voltage i tm = 8a (see note6) - - 1.7 v dv/dt critical rate of rise of off- state voltage v d = rated v d t c = 110c - 100 - v/s http://www..net/ datasheet pdf - http://www..net/
TIC116A, tic116b, tic116c, tic116d, tic116e, tic116m, tic116n, tic116s 29/10/2012 comset semiconductors 3 | 4 semiconductors notes: 1. these values apply when the gate-cathode resistance r gk = 1k ? 2. these values apply for continuous dc opera tion with resistive load. above 70c derate linearly to zero at 110c. 3. this value may be applied continuously under single phase 50 hz half-sine-wave operation with resistive load. above 70 c derate linearly to zero at 110c. 4. this value applies for one 50 hz half-sine-w ave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. surge may be repeated after the device has returned to original thermal equilibrium. 5. this value applies for a maximum averaging time of 20 ms. 6. this parameters must be measured using pulse techniques, t w = 300s, duty cycle 2 %, voltage-sensing contacts, separate from the co urrent-carrying contacts, are located within 3.2mm (1/8 inch) from de device body . mechanical data case to-220 http://www..net/ datasheet pdf - http://www..net/
TIC116A, tic116b, tic116c, tic116d, tic116e, tic116m, tic116n, tic116s 29/10/2012 comset semiconductors 4 | 4 semiconductors pinning revised september 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com pin 1 : kathode pin 2 : anode pin 3 : gate http://www..net/ datasheet pdf - http://www..net/
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